This specification applies to NPN silicon phototransistor chips.
Device No.: MC-3016T
Parameter
Test Condition
Symbol
MC-3016T
Collector-Emitter Breakdown Voltage
IC= 100μA
BVCEO
Min. > 80V
Emitter-Collector Breakdown Voltage
IE= 100μA
BVECO
Min. > 2.0V
Collect dark Current
VCE= 80V
ICEO
Max. < 100nA
Collector-Emitter Saturation Voltage
IC= 2mA IB= 100μA
VCE(SAT)
Max. < 0.3V
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