MC-0108LXB

《簡　　介》：

1. Application:

     This specification applies to silicon non zero-crossing photo triac chips.

 

2. Structure :

     2-1. Planar type.

     2-2. Electrodes: Aluminum alloy.

《商品介紹》：

Parameter	Test Condition	Symbol	MC-0108LXB
Peak Off-State Blocking Voltage	IDRM= 100μA	VDRM	Min.> 600V
Peak Off-State Blocking Current	VDRM=	IDRM	Max.< 100nA
	Rated VDRM
Peak ON-State Voltage	ITM= 100mA	VTM	Max.< 3.0V
Inhibit Voltage	IDS= 10μA	VINH	N/A
Holding Current		IH	180uA
Remark			Non Zero-Crossing Mode