MP-6106

《簡　　介》：

1. Application:

    This specification applies to N-Channel Enhancement Silicon MOSFET chips.

    Device no.: PM-6106

 

2. Structure :

    2-1. Trench type.

    2-2. Electrodes:  Source (Top side): Aluminum alloy.

                    Gate (Top side): Aluminum alloy.

                    Drain (Back side): Ti/Ni/Ag.

《商品介紹》：

Parameter	Test Condition	Symbol	MP-6106
Drain to Source  Breakdown  Voltage	VGS= 0V; ID= 250uA	BVDSS(V) Min.	60
Gate Threshold  Voltage	VDS= VGS; ID= 1mA	VGS(TH) (V)Typ.	2.1
Drain to Source ON Resistance	VGS= 5V;ID= 150mA	RDS(ON) (Ω)Typ.	1.5