MP-6060(SJMOS)

《簡　　介》：

1. Application:

     This specification applies to N-Channel Enhancement Silicon MOSFET chips.

     Device no.:MP-6060

 

 

2. Structure :

     2-1. Super Junction.

     2-2. Electrodes:  Source (Top side): AlCu (0.5%)

                     Gate (Top side): AlCu (0.5%)

                     Drain (Back side): Ti / Ni / Ag.

《商品介紹》：

Parameter	Test Condition	MP-6060 (SJMOS)
Drain to Source  Breakdown  Voltage	VGS= 0V; ID= 250uA	600
Gate Threshold  Voltage	VDS= VGS; ID= 1mA	2.0
Drain to Source ON Resistance	VGS= 5V;ID= 150mA	20