MP-6160 (SiC)

《簡　　介》：

1. Application:

     This specification applies to N-Channel Enhancement Silicon Carbide MOSFET chips.

     Device no.:MP-6160

 

2. Structure :

     2-1. Planar type.

     2-2. Electrodes:  Source (Top side): Aluminum

                     Gate (Top side): Aluminum

                     Drain (Back side): Ni/Ag.

《商品介紹》：

Parameter	Test Condition	MP-6160 (SiC)
Drain to Source  Breakdown  Voltage	VGS= 0V; ID= 250uA	1700
Gate Threshold  Voltage	VDS= VGS; ID= 1mA	3.1 (Vds=10V,)
Drain to Source ON Resistance	VGS= 5V;ID= 150mA	50