MP-6020T/ MP-6025T

《簡　　介》：

1. Application:

     This specification applies to N-Channel Enhancement Silicon MOSFET chips.

Device no.: MP-6020T / MP-6025T

2. Structure :

     2-1. Trench type.

     2-2. Electrodes: Source (Top side): Aluminum alloy.

                    Gate (Top side): Aluminum alloy.

                    Drain (Back side): Ti/Ni/Ag.

《商品介紹》：

Parameter	Test Condition	MP-6020T	MP-6025T
Drain to Source  Breakdown  Voltage	VGS= 0V; ID= 250uA	200	250
Gate Threshold  Voltage	VDS= VGS; ID= 1mA	2.2	2.1
Drain to Source ON Resistance	VGS= 5V;ID= 150mA	3	6.0