MP-6035

《簡　　介》：

1. Application:

     This specification applies to N-Channel Enhancement Silicon MOSFET chips.

     Device no.:MP-6035

2. Structure :

     2-1. Planar type.

     2-2. Electrodes:  Source (Top side): Aluminum alloy.

                     Gate (Top side): Aluminum alloy.

                     Drain (Back side): Ti/Ni/Ag. 

《商品介紹》：

Parameter	Test Condition	Symbol	MP-6035
Drain to Source  Breakdown  Voltage	VGS= 0V; ID= 250uA	BVDSS(V) Min.	360
Gate Threshold  Voltage	VDS= VGS; ID= 1mA	VGS(TH) (V)Typ.	2.0
Drain to Source ON Resistance	VGS= 5V;ID= 150mA	RDS(ON) (Ω)Typ.	17.0